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Creators/Authors contains: "Chen, Beishan"

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  1. ; ; ; ; ; (, Frontiers in Nanotechnology)
    This paper reports the fabrication of silicon PN diode by using DNA nanostructure as the etching template for SiO2and also as then-dopant of Si. DNA nanotubes were deposited ontop-type silicon wafer that has a thermal SiO2layer. The DNA nanotubes catalyze the etching of SiO2by HF vapor to expose the underlying Si. The phosphate groups in the DNA nanotube were used as the doping source to locallyn-dope the Si wafer to form vertical P-N junctions. Prototype PN diodes were fabricated and exhibited expected blockage behavior with a knee voltage ofca.0.7 V. Our work highlights the potential of DNA nanotechnology in future fabrication of nanoelectronics. 
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